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Kobata, Masaaki; Okane, Tetsuo; Kobayashi, Keisuke*
Bunko Kenkyu, 67(4), p.161 - 162, 2018/08
We introduce hard X-ray photoelectron spectroscopy, which has been rapidly introduced and developed in synchrotron radiation facilities. In particular, in order to realize electronic state analysis by hard X-ray photoelectron spectroscopy of insulators, the developed charge neutralization method was described. As an example, we showed adsorption behavior of cesium to nuclear reactor structure assuming Fukushima Daiichi Nuclear Power Plant accident. Finally, future prospects of hard X-ray photoelectron spectroscopy will be described.
Kobata, Masaaki; Okane, Tetsuo; Nakajima, Kunihisa; Suzuki, Eriko; Owada, Kenji; Kobayashi, Keisuke*; Yamagami, Hiroshi; Osaka, Masahiko
Journal of Nuclear Materials, 498, p.387 - 394, 2018/01
Times Cited Count：17 Percentile：86.67(Materials Science, Multidisciplinary)In this study, for the understandings of Cesium (Cs) adsorption behavior on structure materials in severe accidents at a light water nuclear reactor, the chemical state of Cs and its distribution on the surface of SUS304 stainless steel (SS) with different Si concentration were investigated by hard X-ray photoelectron spectroscopy (HAXPES) and scanning electron microscope / energy dispersive X-ray spectroscopy (SEM/EDX). As a result, it was found that Cs is selectively adsorbed at the site where Si distributes with high concentration. CsFeSiO
is a dominant Cs products in the case of low Si content, mainly formed, while Cs
SiO
and CsSiO
are formed in addition to CsFeSiO in the case of high Si content. The chemical forms of the Cs compounds produced in the adsorption process on the SS surface has a close correlation with the concentration and chemical states of Si originally included in SS.
-Ti
O
and 
-TiO studied by hard X-ray photoelectron spectroscopyKobayashi, Keisuke*; Taguchi, Munetaka*; Kobata, Masaaki; Tanaka, Kenji*; Tokoro, Hiroko*; Daimon, Hiroshi*; Okane, Tetsuo; Yamagami, Hiroshi; Ikenaga, Eiji*; Okoshi, Shinichi*
Physical Review B, 95(8), p.085133_1 - 085133_7, 2017/02
Times Cited Count：15 Percentile：56.08(Materials Science, Multidisciplinary) and O/HO adsorption revealed by in situ XAFS and hard X-ray photoelectron spectroscopyCui, Y.*; Harada, Yoshihisa*; Hatanaka, Tatsuya*; Nakamura, Naoki*; Ando, Masaki*; Yoshida, Toshihiko*; Ikenaga, Eiji*; Ishii, Kenji*; Matsumura, Daiju; Li, R.*; et al.
ECS Transactions, 72(8), p.131 - 136, 2016/10
Times Cited Count：1 Percentile：48.91(Electrochemistry)Kobata, Masaaki; Kobayashi, Keisuke*
Journal of the Vacuum Society of Japan, 58(2), p.43 - 49, 2015/02
We report the applications of a hard X-ray photoelectron spectroscopy to the characterization of SiO/Si(001)systems. Large escape depth of high-energy photoelectron enables us to probe buried layers and their interfaces in multilayer structures. Estimation of SiO overlayer thicknesses up to 25 nm by angle resolved XPS was possible in SiO/Si(001) samples. Determination of the thickness profile of a wedged shape SiO buried layer was successfully done in Ir (8 nm)/HfO (2.2 nm)/thickness graded-SiO (0-10 nm) / Si (100). The Si 1s core level showed a SiO thickness dependent shift, which was ascribed to fixed charge at the SiO-Si interface. Energy distribution of interface states at ultrathin thermal oxide/Si(100) interfaces were determined by Si 1
core level shift by applying gate bias in metal-oxide-semiconductor (MOS) structure with 5 nm Au gate electrodes.
Kobata, Masaaki; Satou, Yukihiko; Okane, Tetsuo; Kawasaki, Ikuto; Yoshii, Kenji; Fukuda, Tatsuo; Osaka, Masahiko; Owada, Kenji*
no journal, ,
In order to enable chemical state analysis by hard X-ray photoelectron spectroscopy (HAXPES) for environmental samples such as radioactive microparticles collected around Fukushima Daiichi Nuclear Power Station, charge neutralization technique established using ion and electron coaxial irradiation. Using this technique, the chemical state analysis of the radioactive microparticles was realized.
